DCR1260Y64 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DCR1260Y64 Datasheet PDF : 10 Pages
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DCR1260Y
10000
Conditions:
Tj = 125˚C
IT = 900A
VR = 100V
1000
1000
Conditions:
Tj = 125˚C
IT = 900A
Max
VR = 100V
Max
Min
Min
100
IT
QRA3
100
0.1
dI/dt
25% IRR
IRR
1.0
10
100
Rate of decay of on-state current, dI/dt - (A/µs)
Fig.6 Stored charge
0.1
Anode side cooled
0.01
Double side cooled
0.001
0.0001
0.001
0.01
Conduction
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Effective thermal resistance
Junction to case ˚C/W
Double side
0.0095
0.0105
0.0112
0.0139
Anode side
0.019
0.020
0.0207
0.0234
0.1
1
Time - (s)
10
100
Fig.8 Maximum (limit) transient thermal impedance -
junction to case (˚C/W)
10
0.1
1.0
10
100
Rate of decay of on-state current, dI/dt - (A/µs)
Fig.7 Reverse recovery current
50
2.5
45
40
2.0
35
30
1.5
25
20
1.0
15
10
5
0
1
ITSM (VR = 0)
0.5
ITSM (VR = 50% VRRM)
I2t (VR = 0)
I2t (VR = 50% VRRM)
0
2 3 4 5 6 7 8 9 10
Pulse length, half sine wave - (ms)
Fig.9 Sub-cycle surge currents
7/10
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