DCR1260Y65 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DCR1260Y65 Datasheet PDF : 10 Pages
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DCR1260Y
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Rth(j-c)
Thermal resistance - junction to case
Rth(c-h)
Thermal resistance - case to heatsink
Tvj
Virtual junction temperature
Tstg
Storage temperature range
Fm
Clamping force
Test Conditions
Double side cooled
DC
Single side cooled
Anode DC
Cathode DC
Clamping force 50kN
Double side
(with mounting compound) Single side
On-state (conducting)
Reverse (blocking)
Min. Max. Units
- 0.0095 ˚CW
- 0.019 ˚CW
- 0.019 ˚CW
- 0.002 ˚CW
- 0.004 ˚CW
-
135 ˚C
-
125 ˚C
–55 125 ˚C
45.0 55.0 kN
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
V
GT
IGT
VGD
VFGM
V
FGN
VRGM
I
FGM
PGM
PG(AV)
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
VDRM = 5V, Tcase = 25oC
VDRM = 5V, Tcase = 25oC
At V T = 125oC
DRM case
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 4
-
Max.
3.0
300
0.25
30
0.25
5
10
150
5
Units
V
mA
V
V
V
V
A
W
W
4/10
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