DCR1260Y65 Ver la hoja de datos (PDF) - Dynex Semiconductor

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componentes Descripción

Fabricante

DCR1260Y65

Phase Control Thyristor

Dynex Semiconductor 

DCR1260Y

SURGE RATINGS

Symbol

Parameter

ITSM

Surge (non-repetitive) on-state current

I2t

I2t for fusing

I

Surge (non-repetitive) on-state current

TSM

I2t

I2t for fusing

DYNAMIC CHARACTERISTICS

Symbol

Parameter

IRRM/IRRM

dV/dt

Peak reverse and off-state current

Max. linear rate of rise of off-state voltage

dI/dt

Rate of rise of on-state current

VT(TO)

rT

t

gd

Threshold voltage

On-state slope resistance

Delay time

tq

Turn-off time

IL

Latching current

I

Holding current

H

Test Conditions

10ms half sine, T = 125˚C

case

VR = 50% VRRM - 1/4 sine

10ms half sine, Tcase = 125˚C

VR = 0

Max. Units

16.7

kA

1.4 x 106 A2s

20.8

kA

2.18 x 106 A2s

Test Conditions

Min. Max. Units

At VRRM/VDRM, Tcase = 125˚C

-

To 67% V , T = 125˚C

-

DRM j

From 67% VDRM,

Repetitive 50Hz -

Gate source 30V, 15Ω, Non-repetitive

-

300 mA

1000 V/µs

150 A/µs

300 A/µs

tr ≤ 0.5µs, Tj = 125˚C

At T = 125˚C

vj

At Tvj = 125˚C

VD = 67% VDRM, gate source 30V, 15Ω

tr = 0.5µs, Tj = 25˚C

IT = 1000A, tp = 1ms, Tj =125˚C,

VR = 100V, dIRR/dt = 10A/µs,

VDR = 67% VDRM,

dV /dt

DR

=

25V/µs

linear

Tj = 25˚C, VD = 10V

Tj = 25˚C

-

1.2

V

-

1.18 mΩ

0.5 1.5 µs

600

-

µs

-

600 mA

-

200 mA

3/10

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