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MSC81090

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor 

MSC81090

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI MSC81090 is Designed for

General Purpose Class A Power

Amplifier Applications from 0.4 - 1.2

GHz.

FEATURES:

• PG = 10 dB min. at 2.0 W/ 1.0 GHz

• Hermetically sealed Package

• Omnigold™ Metalization System

• Emitter Ballasted

MAXIMUM RATINGS

IC

200 A

VCC

35 V

PDISS

6.25 W @ TC ≤ 75 °C

TJ

-65 °C to +200 °C

TSTG

-65 °C to +200 °C

θJC

20 °C/W

PACKAGE STYLE .230 4L STUD

COMMON EMITTER

CHARACTERISTICS TC = 25 °C

SYMBOL

NONETEST CONDITIONS

BVCBO

IC = 1.0 mA

BVCER

IC = 5.0 mA

RBE = 10 Ω

BVEBO

IE = 1.0 mA

ICBO

VCB = 28 V

hFE

VCE = 5.0 V

IC = 100 mA

MINIMUM TYPICAL MAXIMUM

45

45

3.5

0.5

15

120

UNITS

V

V

V

mA

---

Cob

VCB = 18 V

f = 1.0 MHz

3.2

pF

POUT

ηC

VCE = 18 V

PIN = 0.2 W

f = 1.0 GHz

2.0

50

2.2

55

W

%

GP

10

10.4

dB

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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