MS1452 Ver la hoja de datos (PDF) - Advanced Power Technology

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Fabricante

MS1452

RF & MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS

Advanced Power Technology  

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

RF & MICROWAVE TRANSISTORS

800-900 MHz BASE STATION APPLICATIONS

Features

• 800-900 MHz

• 24 VOLTS

• COMMON EMITTER

• GOLD METALLIZATION

• INTERNAL INPUT MATCHING

• CLASS AB LINEAR OPERATION

• POUT = 30 W MINIMUM

• GP = 7.5 dB

DESCRIPTION:

The MS1452 is a gold metallized epitaxial silicon NPN planar

transistor using diffused emitter ballast resistors for high

linearity Class AB operation in cellular base station application.

MS1452

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

VCBO

VCES

VEBO

PDISS

IC

TJ

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Power Dissipation

Device Current

Junction Temperature

TSTG

Storage Temperature

Thermal Data

RTH(J-C)

Thermal Resistance Junction-case

Value

48

45

4.0

43

5

+200

-65 to +150

3.0

Unit

V

V

V

W

A

°C

ºC

°C/W

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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