MS1051 Ver la hoja de datos (PDF) - Advanced Power Technology

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Fabricante

MS1051

RF & MICROWAVE TRANSISTORS HF SSB APLICATIONS

Advanced Power Technology  

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

RF & MICROWAVE TRANSISTORS

HF SSB APLICATIONS

Features

• 30 MHz

• 12.5 VOLTS

• POUT = 100 WATTS

• GPE = 12.0 dB MINIMUM

• IMD = –30 dBc

• GOLD METALLIZATION

• COMMON EMITTER CONFIGURATION

MS1051

DESCRIPTION:

The MS1051 is a 12.5 V Class C epitaxial silicon NPN planar

transistor designed primarily for HF communications. This

device utilizes state-of-the-art diffused emitter ballasting to

achieve extreme ruggedness under severe operating

conditions.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

VCBO

VCEO

VEBO

IC

PDISS

TJ

TSTG

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Device Current

Power Dissipation

Junction Temperature

Storage TEmperature

Value

36

18

4.0

20

290

+200

-65 to +150

THERMAL DATA

RTH(J-C)

Thermal Resistance Junction-case

0.6

Unit

V

V

V

A

W

°C

°C

°C/W

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

Rev A 11/2005

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