MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
Designed for 24 Volt UHF large–signal, common emitter, class A linear
amplifier applications in industrial and commercial equipment operating in the
range of 800–960 MHz.
• Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics
Output Power = 3.6 Watts CW
Minimum Power Gain = 11 dB
Minimum ITO = +44.5 dBm
Typical Noise Figure = 6 dB
• Characterized with Small–Signal S–Parameters and Series Equivalent
Large–Signal Parameters from 800–960 MHz
• Silicon Nitride Passivated
• 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1
VSWR @ 24 Vdc, IC = 0.5 Adc and Rated Output Power
• Will Withstand RF Input Overdrive of 0.85 W CW
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
Order this document
by MRF858S/D
MRF858S
CLASS A
800–960 MHz
3.6 W (CW), 24 V
NPN SILICON
RF POWER TRANSISTOR
CASE 319A–02, STYLE 2
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Total Device Dissipation @ TC = 50°C
Derate above 50°C
Operating Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance (TJ = 150°C, TC = 50°C)
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 20 mA, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 20 mA, VBE = 0)
Collector–Base Breakdown Voltage (IC = 20 mA, IE = 0)
Emitter–Base Breakdown Voltage (IE = 1 mA, IC = 0)
Collector Cutoff Current (VCB = 24 V, IE = 0)
Teflon is a registered trademark of du Pont de Nemours & Co., Inc.
Symbol
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICES
Symbol
VCEO
VCBO
VEBO
PD
TJ
Tstg
Symbol
RθJC
Min
28
55
55
4
—
Value
30
55
4
20
0.138
200
–65 to +150
Max
6.9
Typ
Max
35
—
85
—
85
—
5
—
—
1
Unit
Vdc
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
Unit
Vdc
Vdc
Vdc
Vdc
mA
REV 3
MMoOtoTroOla,RInOc.L1A99R8 F DEVICE DATA
MRF858S
1