MRF6S18100NR1 Ver la hoja de datos (PDF) - Freescale Semiconductor
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MRF6S18100NR1 Datasheet PDF : 21 Pages
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TYPICAL CHARACTERISTICS — 1930 - 1990 MHz
17
ηD
16
IRL
15
Gps
60
0
50
−10
40
−20
14
30
−30
VDD = 28 Vdc
IDQ = 900 mA
13
20
−40
1900 1920 1940 1960 1980 2000 2020
f, FREQUENCY (MHz)
Figure 3. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 100 Watts
17
60
0
16
IRL
50
−10
15
40
−20
Gps
14
ηD
30
−30
VDD = 28 Vdc
IDQ = 900 mA
13
20
−40
1900 1920 1940 1960 1980 2000 2020
f, FREQUENCY (MHz)
Figure 4. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 40 Watts
16
IDQ = 1350 mA
15 1125 mA
900 mA
14
665 mA
13
450 mA
12
11
1
VDD = 28 Vdc
f = 1960 MHz
10
100
Pout, OUTPUT POWER (WATTS)
Figure 5. Power Gain versus Output Power
16
14
12
32 V
10
28 V
8
6
VDD = 24 V
4
IDQ = 900 mA
f = 1960 MHz
2
0
20 40 60 80 100 120 140 160
Pout, OUTPUT POWER (WATTS) CW
Figure 6. Power Gain versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S18100NR1 MRF6S18100NBR1
5
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