MRF5812G Ver la hoja de datos (PDF) - Advanced Power Technology

Número de pieza

componentes Descripción

Fabricante

MRF5812G

NPN Silicon High Frequency Transistor

Advanced Power Technology  

MRF5812, R1, R2

MRF5812G, R1, R2

* G Denotes RoHS Compliant, Pb free Terminal Finish

Features

• Low Noise - 2.5 dB @ 500 MHZ

• Associated Gain = 15.5 dB @ 500 MHz

• Ftau - 5.0 GHz @ 10v, 75mA

• Cost Effective SO-8 package

SO-8

R1 suffix–Tape and Reel, 500 units

R2 suffix–Tape and Reel, 2500 units

DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current

Thermal Data

P

D

Total Device Dissipation @ TC = 25ºC

Derate above 25ºC

Value

15

30

2.5

200

1.25

10

Unit

Vdc

Vdc

Vdc

mA

Watts

mW/ ºC

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

Rev A 9/2005

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