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MRF377 Datasheet PDF : 12 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF377/D
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of this
device make it ideal for large–signal, common source amplifier applications in 32
volt digital television transmitter equipment.
• Typical Broadband DVBT OFDM Performance @ 470–860 MHz, 32 Volts,
IDQ = 2.0 A, 8K Mode, 64 QAM
Output Power — 45 Watts Avg.
Power Gain ≥ 16.7 dB
Efficiency ≥ 21%
ACPR ≤ –58 dBc
• Typical Broadband ATSC 8VSB Performance @ 470–860 MHz, 32 Volts,
IDQ = 2.0 A
Output Power — 80 Watts Avg.
Power Gain ≥ 16.5 dB
Efficiency ≥ 27.5%
IMD ≤ –31.3 dBc
• Internally Input and Output Matched for Ease of Use
• Integrated ESD Protection
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts DVBT
OFDM Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS (1)
Rating
Drain–Source Voltage
Gate–Source Voltage
Drain Current – Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
(1) Each side of device measured separately.
Symbol
VDSS
VGS
ID
PD
Tstg
TJ
Symbol
RθJC
MRF377
MRF377R3
MRF377R5
470 – 860 MHz, 240 W, 32 V
LATERAL N–CHANNEL
RF POWER MOSFET
CASE 375G–04, STYLE 1
NI–860C3
Value
65
– 0.5, +15
17
486
2.78
– 65 to +150
200
Max
0.36
Class
1 (Minimum)
M3 (Minimum)
7 (Minimum)
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 0
 MMoOtoTroOla,RInOc.L2A00R3 F DEVICE DATA
MRF377 MRF377R3 MRF377R5
1
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