MRF21090 Ver la hoja de datos (PDF) - Freescale Semiconductor

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componentes Descripción

Fabricante

MRF21090

RF Power Field Effect Transistors

Freescale Semiconductor 

Table 3. ESD Protection Characteristics

Test Conditions

Human Body Model

MRF21090R3

MRF21090SR3

Machine Model

MRF21090R3

MRF21090SR3

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Off Characteristics

Drain- Source Breakdown Voltage

(VGS = 0 Vdc, ID = 100 μAdc)

V(BR)DSS

65

Gate- Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS

—

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

IDSS

—

On Characteristics

Forward Transconductance

(VDS = 10 Vdc, ID = 3 Adc)

gfs

—

Gate Threshold Voltage

(VDS = 10 V, ID = 300 μA)

VGS(th)

2

Gate Quiescent Voltage

(VDS = 28 V, ID = 750 mA)

VGS(Q)

3

Drain- Source On - Voltage

(VGS = 10 V, ID = 1 A)

VDS(on)

—

Dynamic Characteristics

Reverse Transfer Capacitance (1)

(VDS = 28 Vdc, VGS = 0, f = 1 MHz)

Crss

—

Functional Tests (In Freescale Test Fixture)

Common- Source Amplifier Power Gain

Gps

10

(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz,

f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)

Drain Efficiency

η

30

(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz,

f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)

Intermodulation Distortion

IMD

—

(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz,

f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)

Input Return Loss

IRL

—

(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz,

f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)

Common- Source Amplifier Power Gain

(VDD = 28 Vdc, Pout = 75 W CW, IDQ = 750 mA, f = 2170 MHz)

Drain Efficiency

(VDD = 28 Vdc, Pout = 75 W CW, IDQ = 750 mA, f = 2170 MHz)

1. Part is internally matched both on input and output.

Gps

—

η

—

Class

2 (Minimum)

1 (Minimum)

M3 (Minimum)

M4 (Minimum)

Typ

Max

—

—

—

1

—

10

Unit

Vdc

μAdc

μAdc

7.2

—

S

3

4

Vdc

3.8

5

Vdc

0.1

0.6

Vdc

4.2

—

pF

11.7

—

dB

33

—

%

- 30

- 27.5

dBc

- 12

- 9.0

dB

11.7

—

dB

41

—

%

MRF21090R3 MRF21090SR3

2

RF Device Data

Freescale Semiconductor

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