MRF19090 Ver la hoja de datos (PDF) - Freescale Semiconductor
Número de pieza
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MRF19090 Datasheet PDF : 8 Pages
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TYPICAL CHARACTERISTICS
40
η
35
IRL
30 VDD = 26 Vdc
Pout = 90 W (PEP)
25 IDQ = 750 mA
100 kHz Tone Spacing
20
IMD
15
Gps
10
1900 1920 1940 1960 1980 2000
f, FREQUENCY (MHz)
−10
−15
−20
−25
−30
−35
2020
Figure 3. Class AB Performance versus Frequency
35
−30
VDD = 26 Vdc, IDQ = 1.1 A, f = 1960 MHz, Channel Spacing
(Channel Bandwidth): 885 kHz (30 kHz), 1.25 MHz
30 (12.5 kHz), 2.25 MHz (1 MHz)
−40
25 885 kHz
−50
2.25 MHz
20
9 Channel Forward
−60
1.25 MHz
η Pilot:0, Paging:1, Traffic:8−13,
15
Sync:32
−70
Gps
10
−80
0
5
10
15
20
25
30
35
Pout, OUTPUT POWER (WATTS (Avg.))
Figure 4. CDMA Performance ACPR, Gain and
Drain Efficiency versus Output Power
−20
VDD = 26 Vdc
−25 f = 1960 MHz
100 kHz Tone Spacing
−30
−35
550 mA
−40
750 mA
−45
950 mA
−50
−55
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
13
12.5
950 mA
12
750 mA
11.5
11
550 mA
10.5
10
1
VDD = 26 Vdc
f = 1960 MHz
100 kHz Tone Spacing
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain versus Output Power
−20
VDD = 26 Vdc
IDQ = 750 mA
−30 f = 1960 MHz
100 kHz Tone Spacing
−40
−50
5th Order
−60
3rd Order
7th Order
−70
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Products
versus Output Power
12.5
−22
Pout = 90 W (PEP)
IDQ = 750 mA, f = 1960 MHz
−24
100 kHz Tone Spacing
12
−26
Gps
−28
11.5
−30
IMD
−32
11
−34
−36
10.5
22
24
26
28
30
VDD, DRAIN VOLTAGE (VOLTS)
−38
32
Figure 8. Third Order Intermodulation Distortion
and Gain versus Supply Voltage
RF Device Data
Freescale Semiconductor
MRF19090R3 MRF19090SR3
5
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