MRF186 Ver la hoja de datos (PDF) - Motorola => Freescale
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MRF186 Datasheet PDF : 8 Pages
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ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 50 µAdc)
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0 Vdc)
V(BR)DSS
IDSS
IGSS
ON CHARACTERISTICS (1)
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 300 µAdc Per Side)
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 300 mAdc Per Side)
Delta Gate Threshold Voltage (Side to Side)
(VDS = 28 V, ID = 300 mA Per Side)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 3 Adc Per Side)
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc Per Side)
VGS(th)
VGS(Q)
∆VGS(Q)
VDS(on)
gfs
DYNAMIC CHARACTERISTICS (1)
Input Capacitance (Per Side)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Output Capacitance (Per Side)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Reverse Transfer Capacitance (Per Side)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Ciss
Coss
Crss
FUNCTIONAL CHARACTERISTICS (In Motorola Test Fixture, 50 ohm system) (2)
Two–Tone Common Source Amplifier Power Gain
Gps
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 960.0 MHz,
f2 = 960.1 MHz)
Two–Tone Drain Efficiency
η
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 960.0 MHz,
f2 = 960.1 MHz)
3rd Order Intermodulation Distortion
IMD
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 960.0 MHz,
f2 = 960.1 MHz)
Input Return Loss
IRL
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 960.0 MHz,
f2 = 960.1 MHz)
Two–Tone Common Source Amplifier Power Gain
Gps
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 945.0 MHz,
f2 = 945.1 MHz)
Two–Tone Drain Efficiency
η
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 945.0 MHz,
f2 = 945.1 MHz)
3rd Order Intermodulation Distortion
IMD
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 945.0 MHz,
f2 = 945.1 MHz)
Input Return Loss
IRL
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 945.0 MHz,
f2 = 945.1 MHz)
Output Mismatch Stress
Ψ
(VDD = 28 Vdc, Pout = 120 W CW, IDQ = 2 x 400 mA,
f = 960 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests)
(1) Each side of device measured separately.
(2) Device measured in push–pull configuration.
MRF186
2
Min
Typ
Max
Unit
65
—
—
Vdc
—
—
1
µAdc
—
—
1
µAdc
2.5
3
4
Vdc
3.3
4.2
5
Vdc
—
—
0.3
Vdc
—
0.58
0.7
Vdc
2.4
2.8
—
S
—
177
—
pF
—
45
—
pF
—
3.4
—
pF
11
12.2
—
dB
30
35
—
%
—
–32
–28
dBc
9
16
—
dB
—
12
—
dB
—
33
—
%
—
–32
—
dBc
—
16
—
dB
No Degradation In Output Power
Before and After Test
MOTOROLA RF DEVICE DATA
Archived 2005
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