MRF150 Ver la hoja de datos (PDF) - Motorola => Freescale
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MRF150 Datasheet PDF : 6 Pages
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA)
Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0)
Gate–Body Leakage Current (VGS = 20 V, VDS = 0)
V(BR)DSS
125
—
—
Vdc
IDSS
—
—
5.0
mAdc
IGSS
—
—
1.0
µAdc
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
VGS(th)
1.0
3.0
5.0
Vdc
Drain–Source On–Voltage (VGS = 10 V, ID = 10 A)
Forward Transconductance (VDS = 10 V, ID = 5.0 A)
VDS(on)
1.0
3.0
5.0
Vdc
gfs
4.0
7.0
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Ciss
—
400
—
pF
Coss
—
240
—
pF
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Crss
—
40
—
pF
FUNCTIONAL TESTS (SSB)
Common Source Amplifier Power Gain
f = 30 MHz
Gps
—
17
—
dB
(VDD = 50 V, Pout = 150 W (PEP), IDQ = 250 mA) f = 150 MHz
—
8.0
—
Drain Efficiency
(VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,
ID (Max) = 3.75 A)
η
—
45
—
%
Intermodulation Distortion (1)
(VDD = 50 V, Pout = 150 W (PEP),
f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 250 mA)
Load Mismatch
(VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,
IDQ = 250 mA, VSWR 30:1 at all Phase Angles)
IMD(d3)
IMD(d11)
ψ
dB
—
– 32
—
—
– 60
—
No Degradation in Output Power
CLASS A PERFORMANCE
Intermodulation Distortion (1) and Power Gain
(VDD = 50 V, Pout = 50 W (PEP), f1 = 30 MHz,
f2 = 30.001 MHz, IDQ = 3.0 A)
GPS
—
20
—
dB
IMD(d3)
—
– 50
—
IMD(d9 – 13)
—
– 75
—
NOTE:
1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
BIAS +
0 – 12 V –
RF
INPUT
L1
C5
C6
C7
C8
R1
DUT
R3 C2
T1
T2
C4
C1
C3
R2
L2
C9
+
C10
–
+
50 V
–
RF
OUTPUT
C1 — 470 pF Dipped Mica
C2, C5, C6, C7, C8, C9 — 0.1 µF Ceramic Chip or
Monolythic with Short Leads
C3 — 200 pF Unencapsulated Mica or Dipped Mica
with Short Leads
C4 — 15 pF Unencapsulated Mica or Dipped Mica
with Short Leads
C10 — 10 µF/100 V Electrolytic
L1 — VK200/4B Ferrite Choke or Equivalent, 3.0 µH
L2 — Ferrite Bead(s), 2.0 µH
R1, R2 — 51 Ω/1.0 W Carbon
R3 — 3.3 Ω/1.0 W Carbon (or 2.0 x 6.8 Ω/1/2 W in Parallel
T1 — 9:1 Broadband Transformer
T2 — 1:9 Broadband Transformer
Figure 1. 30 MHz Test Circuit (Class AB)
MRF150
2
MOTOROLA RF DEVICE DATA
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