MRF150 Ver la hoja de datos (PDF) - Motorola => Freescale

Número de pieza

componentes Descripción

Fabricante

MRF150

150 W, to 150 MHz N–CHANNEL MOS LINEAR RF POWERFET

Motorola => Freescale 

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

RF Power Field-Effect Transistor

N–Channel Enhancement–Mode

Designed primarily for linear large–signal output stages up to 150 MHz

frequency range.

• Specified 50 Volts, 30 MHz Characteristics

Output Power = 150 Watts

Power Gain = 17 dB (Typ)

Efficiency = 45% (Typ)

• Superior High Order IMD

• IMD(d3) (150 W PEP) — – 32 dB (Typ)

• IMD(d11) (150 W PEP) — – 60 dB (Typ)

• 100% Tested For Load Mismatch At All Phase Angles With

30:1 VSWR

D

Order this document

by MRF150/D

MRF150

150 W, to 150 MHz

N–CHANNEL MOS

LINEAR RF POWER

FET

G

S

CASE 211–11, STYLE 2

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain–Source Voltage

Drain–Gate Voltage

Gate–Source Voltage

Drain Current — Continuous

Total Device Dissipation @ TC = 25°C

Derate above 25°C

VDSS

125

VDGO

125

VGS

± 40

ID

16

PD

300

1.71

Vdc

Vdc

Vdc

Adc

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

THERMAL CHARACTERISTICS

Tstg

– 65 to +150

°C

TJ

200

°C

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

RθJC

0.6

°C/W

Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 8

©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA

MRF150

1

Share Link: