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MRF1030 Datasheet PDF : 2 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF1030/D
The RF Line
UHF Power Transistor
. . . designed primarily for wideband, large–signal output and driver amplifier
stages to 1.0 GHz.
• Designed for Class A Linear Power Amplifiers
• Specified 25 Volt, 900 MHz Characteristics:
Output Power — 3.0 Watts
Power Gain — 7.5 dB Min, Class AB
• Gold Metallization for Improved Reliability
MRF1030
3.0 W, TO 1.0 GHz
LINEAR
UHF POWER TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
PD
Operating Junction Temperature
TJ
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (TC = 70°C)
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 15 mA, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 15 mA, VBE = 0)
Collector–Base Breakdown Voltage
(IC = 15 mA, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 5.0 mA, IC = 0)
Collector Cutoff Current
(VCB = 25 V, IE = 0)
ON CHARACTERISTICS
DC Current Gain (IC = 500 mA, VCE = 5.0 V)
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 28 V, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCE = 25 V, Pout = 3.0 W, f = 900 MHz, IC = 0.4 A)
Load Mismatch
(VCE = 25 V, IC = 0.4 A, Pout = 3.0 W, f = 900 MHz,
Load VSWR = ∞:1, All Phase Angles)
Value
30
60
4.0
29
0.167
200
– 65 to +150
Unit
Vdc
Vdc
Vdc
Watts
W/°C
°C
°C
Symbol
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
hFE
Cob
GPE
ψ
CASE 244–04, STYLE 1
(.280 SOE)
Symbol
RθJC
Min
30
60
60
4.0
—
Max
6.0
Typ
Max
—
—
—
—
—
—
—
—
—
2.0
Unit
°C/W
Unit
Vdc
Vdc
Vdc
Vdc
mAdc
20
—
80
—
—
—
9.8
pF
7.5
8.5
—
dB
No Degradation in Output Power
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF1030
1
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