MR850(2006) Ver la hoja de datos (PDF) - ON Semiconductor

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componentes Descripción

Fabricante

MR850
(Rev.:2006)

Axial Lead Fast Recovery Rectifiers

ON Semiconductor 

MR850, MR851, MR852, MR854, MR856

MAXIMUM RATINGS

Rating

Symbol MR850 MR851 MR852 MR854 MR856 Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Non−Repetitive Peak Reverse Voltage

RMS Reverse Voltage

Average Rectified Forward Current

(Single phase resistive load, TA = 80°C)

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions)

VRRM

50

100

200

400

600

V

VRWM

VR

VRSM

75

150

250

450

650

V

VR(RMS)

35

70

140

280

420

V

IO

3.0

A

IFSM

100

A

(one cycle)

Operating and Storage Junction Temperature Range

TJ, Tstg

− 65 to +125

°C

− 65 to +150

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction−to−Ambient

(Recommended Printed Circuit Board Mounting)

Symbol

RqJA

Max

28

Unit

°C/W

ELECTRICAL CHARACTERISTICS

Characteristic

Forward Voltage

(IF = 3.0 A, TJ = 25°C)

Reverse Current (rated DC voltage) TJ = 25°C

MR850

MR851

TJ = 80°C

MR852

MR854

MR856

REVERSE RECOVERY CHARACTERISTICS

Characteristic

Reverse Recovery Time

(IF = 1.0 A to VR = 30 Vdc)

(IF = 15 A, di/dt = 10 A/ms)

Reverse Recovery Current

(IF = 1.0 A to VR = 30 Vdc)

Symbol

Min

Typ

Max

Unit

VF

−

1.04 1.25

V

IR

−

2.0

10

mA

−

−

150

−

60

150

−

−

200

−

−

250

−

100

300

Symbol

Min

Typ

Max

Unit

trr

ns

−

100

200

−

150

300

IRM(REC)

−

−

2.0

A

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