MPSW06RLRA Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
MPSW06RLRA Datasheet PDF : 4 Pages
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MPSW05, MPSW06
1.0
0.8
0.6
IC = 10 mA
50
mA
100 mA
0.4
TJ = 25°C
250 mA 500 mA
1.0
TJ = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
0
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
0.2
VCE(sat) @ IC/IB = 10
0
0.5 1.0 2.0 5.0 10 20
50 100 200 500
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
-0.8
-1.2
-1.6
-2.0
θVB for VBE
-2.4
-2.8
0.5 1.0 2.0
5.0 10 20
50 100 200 500
IC, COLLECTOR CURRENT (mA)
Figure 4. Base−Emitter Temperature Coefficient
80
60
TJ = 25°C
40
Cibo
20
10
8.0
6.0
4.0
0.1 0.2
0.5 1.0 2.0 5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitance
Cobo
50 100
300
VCE = 2.0 V
200 TJ = 25°C
100
70
50
30
2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
Figure 6. Current−Gain − Bandwidth Product
2k
1k
500
200
100
50
20
10
1.0
DUTY CYCLE ≤ 10%
1.0 ms
100 ms
TA = 25°C
TC = 25°C 1.0 s
dc
dc
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MPSW05
MPSW06
2.0
5.0
10
20
60 80 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Active Region − Safe Operating Area
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