MPS6726G Ver la hoja de datos (PDF) - ON Semiconductor

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Fabricante

MPS6726G

One Watt Amplifier Transistors

ON Semiconductor 

MPS6726

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage

(IC = −10 mAdc, IB = 0)

Collector −Base Breakdown Voltage

(IC = −100 mAdc, IE = 0)

Emitter −Base Breakdown Voltage

(IE = −100 mAdc, IC = 0)

Collector Cutoff Current

(VCB = −40 Vdc, IE = 0)

Emitter Cutoff Current

(VEB = −5.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = −100 mAdc, VCE = −1.0 Vdc)

(IC = −1000 mAdc, VCE = −1.0 Vdc)

Collector −Emitter Saturation Voltage

(IC = −1000 mAdc, IB = −100 mAdc)

Base −Emitter On Voltage

(IC = −1000 mAdc, VCE = −1.0 Vdc)

SMALL−SIGNAL CHARACTERISTICS

Collector−Base Capacitance

(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)

Small−Signal Current Gain

(IC = −50 mAdc, VCE = −10 Vdc, f = 20 MHz)

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

Symbol

V(BR)CEO

V(BR)CBO

V(BR)EBO

ICBO

IEBO

hFE

VCE(sat)

VBE(on)

Ccb

hfe

Min

Max

−30

−

−40

−

−5.0

−

−

−0.1

−

−0.1

60

−

50

250

−

−0.5

−

−1.2

−

30

2.5

25

Unit

Vdc

Vdc

Vdc

mAdc

mAdc

−

Vdc

Vdc

pF

−

200

100

70

VCE = -1.0 V

50

TJ = 25°C

-1.0

-0.8

IC =

-10 mA

IC =

-50 mA

-0.6

IC = IC = IC =

IC =

-100 -250 -500 mA -1000 mA

mA mA

-0.4

20

-10

-20

-50 -100 -200

-500

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

-0.2

-1000

TJ = 25°C

0

-0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100

IB, BASE CURRENT (mA)

Figure 2. Collector Saturation Region

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