MP04TT600 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
MP04TT600 Datasheet PDF : 10 Pages
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MP04TT600
2500
25
Measured under pulse
conditions
12
1: Tj = 125˚C Min
2: Tj = 125˚C Max
2000
20
1500
15
I2t = Î2 x t
2
700
1000
500
10
600
I2t
5
500
0
0.5
1.0
1.5
2.0
2.5
Instantaneous on-state voltage VT - (V)
Fig. 3 Maximum (limit) on-state characteristics
100
Pulse width Frequency Hz Table gives pulse power PGM in Watts
µs 50 100 400
100 150 150 150
200 150 150 125
500 150 150 100
1ms 150 100 25
10 10ms 20 - -
0
400
1
10 1 2 3 4 5 10 20 30 50
ms
Cycles at 50Hz
Duration
Fig. 4 Surge (non-repetitive) on-state current vs time
(with 50% VRSM at Tcase = 125˚C)
0.12
0.1
0.08
Upper limit 99%
1
VGD
Lower limit 99%
Region of certain
triggering
0.1
0.001
0.01
0.1
1
10
Gate trigger current, IGT - (A)
IFGM
Fig. 5 Gate characteristics
0.06
0.04
0.02
0
0.001 0.01
0.1
1
10
Time (Seconds)
100 1000
Fig. 6 Transient thermal impedance - dc
4/10
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