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MP03XXX330-12 Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza
componentes Descripción
Fabricante
MP03XXX330-12
Dynex
Dynex Semiconductor Dynex
MP03XXX330-12 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
MP03 XXX 330 Series
SURGE RATINGS - PER ARM
Symbol
I
TSM
I2t
Parameter
Conditions
Surge (non-repetitive) on-state current
10ms half sine; VR = 0
Tj = 130˚C
VR = 50% VRRM
I2t for fusing
10ms half sine; VR = 0
Tj = 130˚C
VR = 50% VRRM
THERMAL & MECHANICAL RATINGS
Symbol
Rth(j-c)
Rth(c-hs)
Tvj
Tstg
Visol
Parameter
Conditions
Thermal resistance - junction to case
per Thyristor or Diode
Thermal resistance - case to heatsink
per thyristor or diode
Virtual junction temperature
dc
halfwave
3 phase
Mounting torque = 5Nm
with mounting compound
Off-state (Blocking)
Storage temperature range
Isolation voltage
Commoned terminals to base plate
AC RMS, 1min, 50Hz
Max.
Units
10.6
A
8.5
kA
0.56 x 106 A2s
0.36 x 106 A2s
Max.
0.11
0.12
0.13
Units
oC/W
oC/W
oC/W
0.05 oC/W
130
oC
-40 to 130 oC
2.5
kV
DYNAMIC CHARACTERISTICS- THYRISTOR
Symbol
Parameter
Conditions
Max.
Units
VTM
On-state voltage
At 1000A, T = 25oC
case
IRRM/IDRM Peak reverse and off-state current
At VRRM/VDRM, Tj = 130oC
dV/dt Linear rate of rise of off-state voltage To 67% VDRM Tj = 130oC
dI/dt Rate of rise of on-state current
From 67% V to 600A
DRM
Gate source 10V, 5
Rise time 0.5µs, Tj =130oC
V
T(TO)
Threshold voltage
At T = 130oC
vj
rT
On-state slope resistance
At T = 130oC
vj
* Higher dV/dt values available, contact factory for particular requirements.
1.50
30
200*
V
mA
V/µs
100 A/µs
0.8
V
0.7
m
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
2/10

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