MOCD208 Ver la hoja de datos (PDF) - Fairchild Semiconductor
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MOCD208 Datasheet PDF : 8 Pages
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Electrical Characteristics (TA = 25°C unless otherwise specified)(3)
Symbol
Parameter
Test Conditions
Device Min. Typ.* Max. Unit
EMITTER
VF Input Forward Voltage
IR Reverse Leakage Current
C Capacitance
IF = 30mA
VR = 6.0V
All
1.25 1.55
V
All
0.001 100
µA
All
18
pF
DETECTOR
ICEO Collector-Emitter Dark Current
ICEO
V(BR)CEO Collector-Emitter Breakdown
Voltage
VCE = 10V, TA = 25°C
VCE = 10V, TA = 100°C
IC = 100µA
All
1.0 50
nA
All
1.0
µA
All
70 100
V
V(BR)CEO Emitter-Collector Breakdown
Voltage
IE = 100µA
All
7.0 10
V
CCE Collector-Emitter Capacitance f = 1.0 MHz, VCE = 0V
All
COUPLED
7.0
pF
CTR Current Transfer Ratio,
Collector to Emitter(4)
IF = 10mA, VCE = 5V
MOCD207M 100
MOCD208M 40
200
%
125
IF = 1mA, VCE = 5V
MOCD207M 34
MOCD208M 13
VCE (sat) Collector-Emitter Saturation
IC = 2.0mA, IF = 10mA
All
Voltage
0.4
V
ton Turn-On Time
toff Turn-Off Time
tr
Rise Time
tf
Fall Time
VISO Isolation Surge Voltage(1, 2)
RISO
CISO
Isolation Resistance(2)
Isolation Capacitance(2)
IC = 2.0mA, VCC = 10V,
RL = 100Ω
IC = 2.0mA, VCC = 10V,
RL = 100Ω
IC = 2.0mA, VCC = 10V,
RL = 100Ω
IC = 2.0mA, VCC = 10V,
RL = 100Ω
f = 60Hz, t = 1 min.,
II-O ≤ 2µA
VI-O = 500V
VI-O = 0V, f = 1MHz
All
3.0
All
2.8
All
1.6
All
2.2
All
2500
All
1011
All
0.2
µs
µs
µs
µs
Vac(rms)
Ω
pF
*Typical values at TA = 25°C
Note:
1. Input-Output Isolation Voltage, VISO, is an internal device dielectric breakdown rating.
2. For this test, Pins 1, 2, 3 and 4 are common and Pins 5, 6, 7 and 8 are common.
3. Always design to the specified minimum/maximum electrical limits (where applicable).
4. Current Transfer Ratio (CTR) = IC/IF x 100%.
3
MOCD207M, MOCD208M Rev. 1.0.5
www.fairchildsemi.com
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