MOC8111VM Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
MOC8111VM
Fairchild Semiconductor
MOC8111VM Datasheet PDF : 9 Pages
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Electrical Characteristics (TA = 25°C Unless otherwise specified.)
Individual Component Characteristics
Symbol
Parameter
Test Conditions
EMITTER
VF Input Forward Voltage
VR Reverse Voltage
CJ
Capacitance
IR
Reverse Leakage Current
DETECTOR
IF = 60mA
IF = 10mA
IR = 10µA
VF = 0V, f = 1.0MHz
VF = 1V, f = 1.0MHz
VR = 3.0V
BVCEO
BVECO
ICEO
CCE
Breakdow Voltage, Collector to Emitter
Breakdow Voltage, Emitter to Collector
Leakage Current, Collector to Emitter
Capacitance, Collector to Emitter
IC = 1.0mA, IF = 0
IE = 100µA, IF = 0
VCE = 10V, IF = 0
VCE = 0 V, f = 1MHz
Min. Typ. Max. Unit
1.35 1.65 V
1.15 1.50
6.0
15
V
50
pF
65
.35
10
µA
70
V
7
V
5
50
V
8
pF
Isolation Characteristics
Symbol
Characteristic
VISO
CISO
Input-Output Isolation Voltage
Isolation Capacitance
Test Conditions
f = 60Hz, t = 1 sec.
VI-O = 0, f = 1MHz
Min.
7500
Typ.
0.5
Max.
Units
VAC(PK)
pF
Transfer Characteristic
Symbol Characteristics
DC CHARACTERISTICS
CTR Output/Input Current
Transfer Ratio
VCE(SAT) Collector-Emitter
Saturation Voltage
AC CHARACTERISTICS
Non-Saturated Switching Times
ton Turn-On Time
toff Turn-Off Time
Saturated Switching Times
ton Turn-On Time
tr
Rise-Time
toff Turn-Off Time
tf
Fall-Time
Test Conditions
IF = 10mA, VCE = 5V
IF = 10mA, IC = 2.5mA
Device
Min. Typ. Max. Units
MOC8111M
20
%
MOC8112M
50
MOC8113M 100
All
0.27 0.4 V
RL = 100Ω, IC = 2mA,
All
VCC = 10V, See Figure 7
All
IF = 20mA, VCE = 0.4V
IF = 10mA, VCE = 0.4V
IF = 20mA, VCE = 0.4V
IF = 10mA, VCE = 0.4V
IF = 20mA, VCE = 0.4V
IF = 10mA, VCE = 0.4V
IF = 20mA, VCE = 0.4V
IF = 10mA, VCE = 0.4V
MOC8111M
MOC812M/3M
MOC8111M
MOC812M/3M
MOC8111M
MOC812M/3M
MOC8111M
MOC812M/3M
6.0 10 µs
5.5 10 µs
3.0 5.5 µs
4.2 8.0
2.0 4.0 µs
3.0 6.0
18 34 µs
23 39
11 20 µs
14 24
©2007 Fairchild Semiconductor Corporation
MOC8111M, MOC8112M, MOC8113M Rev. 1.0.0
3
www.fairchildsemi.com
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