BDY25(2012) Ver la hoja de datos (PDF) - Comset Semiconductors
Número de pieza
componentes Descripción
Fabricante
BDY25 Datasheet PDF : 3 Pages
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BDY23 – 180T2
BDY24 – 181T2
BDY25 – 182T2
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
VCEO(BR)
Collector-Emitter
IC=50 mA
Breakdown Voltage (*) IB=0
BDY23, 180T2 60 -
BDY24, 181T2 80 -
BDY25, 182T2 140 -
-
-
V
-
Collector-Emitter Cutoff VCE=60 V
BDY23
-
-
ICEO
Current
VCE=90 V
BDY24
-
- 1.0 mA
VCE=140 V
BDY25
-
-
IEBO
Emitter-Base Cutoff
Current
VEB=10 V
BDY23, 180T2
BDY24, 181T2 -
BDY25, 182T2
- 1.0 mA
ICES
VCE(SAT)
Collector-Emitter Cutoff
Current
Collector-Emitter
saturation Voltage (*)
VCE=60 V
VBE=0 V
VCE=100 V
VBE=0 V
VCE=180 V
VBE=0 V
IC=2.0 A,
IB=0.25 A
BDY23, 180T2 -
BDY24, 181T2 -
BDY25, 182T2 -
BDY23, 180T2 -
BDY24, 181T2 -
BDY25, 182T2 -
- 0.5
- 1.0 mA
- 1.0
-
1
- 0.6 V
- 0.6
V(BR)CBO
Collector-Base
Breakdown Voltage (*)
IC=3 mA
BDY23, 180T2 60 -
BDY24, 181T2 100 -
BDY25, 182T2 200 -
-
-
V
-
VBE(SAT)
Base-Emitter Voltage (*)
IC=2.0 A,
IB=0.25 A
BDY23, 180T2 -
BDY24, 181T2 -
BDY25, 182T2 -
- 2.0
- 1.2 V
- 1.2
VCE=4 V
h21E
Static Forward Current
transfer ratio (*)
IC=1 A
VCE=4 V
IC=2 A
A
- 55 -
B
- 65 -
C
A
- 90 -
15 20 45
-
B
30 45 90
C
75 82 100
fT
td + tr
ts + tf
Transition Frequency
Turn-on time
Turn-off time
VCE=15 V, IC=0.5 A, f=10 MHz
IC=5 A, IB=1 A
IC=5 A, IB1=1 A, IB2=-0.5 A
10 -
- MHz
- 0.3 0.5 µs
- 0.3 0.5 µs
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
31/10/2012
COMSET SEMICONDUCTORS
2|3
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