2N6053(2012) Ver la hoja de datos (PDF) - Comset Semiconductors
Número de pieza
componentes Descripción
Fabricante
2N6053 Datasheet PDF : 3 Pages
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PNP 2N6053
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ MAx Unit
ICEX
Collector Cutoff
VCE= VCEX =-60 V, VBE=1.5 V 2N6053
-
Current
VCE= VCEX =-60 V, VBE=1.5 V
TC=150°C
2N6053
-
ICEO
Collector Cutoff
Current
VCE=-30 Vdc, IB=0
2N6053 -
IEBO
Emitter Cutoff
Current
VEB=-5 V
2N6053 -
Collector-Emitter
VCEO(SUS) Sustaining Voltage IC=-0.1 A
(*)
2N6053 -60
- -500 µA
-
-5 mA
- -0.5 mA
- -2.0 mA
-
-
V
VCE(SAT)
VBE(SAT)
VBE(ON)
Collector-Emitter
saturation Voltage
(*)
IC=-4 A, IB=-16 mA
IC=-8 A, IB=-80 mA
Base-Emitter
Saturation Voltage IC=-8 A, IB=-80 mA
(*)
Base-Emitter
Voltage (*)
IC=-4 A, VCE=-3 V
2N6053 -
2N6053 -
- -2.0
V
- -3.0
2N6053 -
-
-4 V
2N6053 -
- -2.8 V
fT
Transition
Frequency
IC=-3 A, VCE=-3 V, f=1 MHz 2N6053 4
-
- MHz
VCE=-3 V, IC=-4 A
hFE
DC Current Gain
(*)
VCE=-3.0 V, IC=-8 A
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
2N6053 750 - 18000 -
2N6053 100 -
-
17/10/2012
COMSET SEMICONDUCTORS
2|3
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