MMJT9435 Ver la hoja de datos (PDF) - ON Semiconductor
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MMJT9435 Datasheet PDF : 6 Pages
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MMJT9435
Preferred Device
Bipolar Power Transistors
PNP Silicon
Features
• Pb−Free Packages are Available
• Collector −Emitter Sustaining Voltage −
VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc
• High DC Current Gain −
hFE = 125 (Min) @ IC = 0.8 Adc
= 90 (Min) @ IC = 3.0 Adc
• Low Collector −Emitter Saturation Voltage −
VCE(sat) = 0.275 Vdc (Max) @ IC = 1.2 Adc
= 0.55 Vdc (Max) @ IC = 3.0 Adc
• SOT−223 Surface Mount Packaging
• Epoxy Meets UL 94, V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V
http://onsemi.com
POWER BJT
IC = 3.0 AMPERES
BVCEO = 30 VOLTS
VCE(sat) = 0.275 VOLTS
C 2,4
B1 E3
Schematic
MARKING
DIAGRAM
SOT−223
CASE 318E
STYLE 1
AWW
9435
9435
A
WW
= Specific Device Code
= Assembly Location
= Work Week
PIN ASSIGNMENT
4
C
BCE
1 23
Top View Pinout
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
1
September, 2004 − Rev. 5
Publication Order Number:
MMJT9435/D
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