MMBTA92LT1G Ver la hoja de datos (PDF) - ON Semiconductor
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MMBTA92LT1G Datasheet PDF : 4 Pages
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MMBTA92LT1G, MMBTA93LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = −1.0 mAdc, IB = 0)
MMBTA92
MMBTA93
Collector −Base Breakdown Voltage
(IC = −100 mAdc, IE = 0)
MMBTA92
MMBTA93
Emitter −Base Breakdown Voltage
(IE = −100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = −200 Vdc, IE = 0)
(VCB = −160 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = −3.0 Vdc, IC = 0)
MMBTA92
MMBTA93
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = −1.0 mAdc, VCE = −10 Vdc)
(IC = −10 mAdc, VCE = −10 Vdc)
Both Types
Both Types
(IC = −30 mAdc, VCE = −10 Vdc)
Collector −Emitter Saturation Voltage
(IC = −20 mAdc, IB = −2.0 mAdc)
Base−Emitter Saturation Voltage
(IC = −20 mAdc, IB = −2.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product
(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz)
Collector−Base Capacitance
(VCB = −20 Vdc, IE = 0, f = 1.0 MHz)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
MMBTA92
MMBTA93
MMBTA92
MMBTA93
MMBTA92
MMBTA93
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Ccb
Min
−300
−200
−300
−200
−5.0
−
−
−
25
40
25
25
−
−
−
50
−
−
Max
Unit
−
−
−
−
−
−0.25
−0.25
−0.1
Vdc
Vdc
Vdc
mAdc
mAdc
−
−
−
−
−
Vdc
−0.5
−0.5
−0.9
Vdc
−
MHz
pF
6.0
8.0
300
250
200
150
100
50
0
0.1
TJ = +125°C
25°C
-55°C
1.0
10
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
VCE = 10 Vdc
100
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