MMBTA42LT3 Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
MMBTA42LT3 Datasheet PDF : 5 Pages
| |||
MMBTA42L, SMMBTA42L, MMBTA43L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
Vdc
MMBTA42, SMMBTA42
300
−
MMBTA43
200
−
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
Vdc
MMBTA42, SMMBTA42
300
−
MMBTA43
200
−
Emitter −Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
(VCB = 160 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 3)
V(BR)EBO
6.0
−
Vdc
MMBTA42, SMMBTA42
MMBTA43
MMBTA42, SMMBTA42
MMBTA43
ICBO
IEBO
mAdc
−
0.1
−
0.1
mAdc
−
0.1
−
0.1
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
hFE
−
Both Types
25
−
Both Types
40
−
(IC = 30 mAdc, VCE = 10 Vdc)
MMBTA42, SMMBTA42
MMBTA43
40
−
40
−
Collector −Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
VCE(sat)
Vdc
MMBTA42, SMMBTA42
−
0.5
MMBTA43
−
0.5
Base−Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
SMALL− SIGNAL CHARACTERISTICS
VBE(sat)
−
0.9
Vdc
Current −Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
50
−
MHz
Collector−Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Ccb
MMBTA42, SMMBTA42
MMBTA43
pF
−
3.0
−
4.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
www.onsemi.com
2
Share Link: 