MMBT3906LT1 Ver la hoja de datos (PDF) - ON Semiconductor

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Fabricante

MMBT3906LT1

General Purpose Transistor(PNP Silicon)

ON Semiconductor 

MMBT3906LT1

TYPICAL STATIC CHARACTERISTICS

2.0

TJ = +125°C

1.0

+25°C

VCE = 1.0 V

0.7

−55 °C

0.5

0.3

0.2

0.1

0.1

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

IC, COLLECTOR CURRENT (mA)

20 30

50 70 100

200

Figure 13. DC Current Gain

1.0

0.8

IC = 1.0 mA

0.6

0.4

10 mA

30 mA

TJ = 25°C

100 mA

0.2

0

0.01

0.02 0.03

0.05 0.07 0.1

0.2 0.3

0.5 0.7 1.0

IB, BASE CURRENT (mA)

Figure 14. Collector Saturation Region

2.0 3.0

5.0 7.0 10

1.0

TJ = 25°C

0.8

0.6

VBE(sat) @ IC/IB = 10

VBE @ VCE = 1.0 V

0.4

VCE(sat) @ IC/IB = 10

0.2

0

1.0 2.0 5.0 10

20

50

100 200

IC, COLLECTOR CURRENT (mA)

Figure 15. “ON” Voltages

1.0

0.5 qVC FOR VCE(sat)

0

−0.5

−1.0

−1.5

qVB FOR VBE(sat)

+25°C TO +125°C

−55 °C TO +25°C

+25°C TO +125°C

−55 °C TO +25°C

−2.0

0

20 40 60 80 100 120 140 160 180 200

IC, COLLECTOR CURRENT (mA)

Figure 16. Temperature Coefficients

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