MMBT3906LT1 Ver la hoja de datos (PDF) - ON Semiconductor
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MMBT3906LT1 Datasheet PDF : 6 Pages
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MMBT3906LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0)
Collector −Base Breakdown Voltage (IC = −10 mAdc, IE = 0)
Emitter −Base Breakdown Voltage (IE = −10 mAdc, IC = 0)
Base Cutoff Current (VCE = −30 Vdc, VEB = −3.0 Vdc)
Collector Cutoff Current (VCE = −30 Vdc, VEB = −3.0 Vdc)
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = −0.1 mAdc, VCE = −1.0 Vdc)
(IC = −1.0 mAdc, VCE = −1.0 Vdc)
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −50 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
Base −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product (IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz)
Output Capacitance (VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance (VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
Small −Signal Current Gain (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
Output Admittance (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
Noise Figure (IC = −100 mAdc, VCE = −5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = −3.0 Vdc, VBE = 0.5 Vdc,
IC = −10 mAdc, IB1 = −1.0 mAdc)
Storage Time
Fall Time
(VCC = −3.0 Vdc, IC = −10 mAdc,
IB1 = IB2 = −1.0 mAdc)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Symbol
Min
Max
Unit
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
−40
−40
−5.0
—
—
—
Vdc
—
Vdc
—
Vdc
−50
nAdc
−50
nAdc
HFE
—
60
—
80
—
100
300
60
—
30
—
VCE(sat)
Vdc
—
−0.25
—
−0.4
VBE(sat)
Vdc
−0.65 −0.85
—
−0.95
fT
250
—
MHz
Cobo
—
4.5
pF
Cibo
—
10
pF
hie
2.0
12
kΩ
hre
0.1
10
X 10− 4
hfe
100
400
—
hoe
3.0
60
mmhos
NF
—
4.0
dB
td
—
35
ns
tr
—
35
ts
—
225
ns
tf
—
75
< 1 ns
+0.5 V
10 k
10.6 V
300 ns
DUTY CYCLE = 2%
3V
275
+9.1 V
0
CS < 4 pF*
10 < t1 < 500 ms
t1
DUTY CYCLE = 2%
< 1 ns
10.9 V
10 k
1N916
3V
275
CS < 4 pF*
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
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