C67070-A2120-A67 Ver la hoja de datos (PDF) - Infineon Technologies

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C67070-A2120-A67

IGBT Power Module

Infineon Technologies 

BSM 400 GB 60 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Switching Characteristics, Inductive Load at Tj = 125 °C

Turn-on delay time

td(on)

ns

VCC = 300 V, VGE = 15 V, IC = 400 A

RGon = 4.7 Ω

-

200

-

Rise time

tr

VCC = 300 V, VGE = 15 V, IC = 400 A

RGon = 4.7 Ω

-

190

-

Turn-off delay time

td(off)

VCC = 300 V, VGE = -15 V, IC = 400 A

RGoff = 4.7 Ω

-

680

-

Fall time

tf

VCC = 300 V, VGE = -15 V, IC = 400 A

RGoff = 4.7 Ω

-

510

-

Free-Wheel Diode

Diode forward voltage

VF

IF = 400 A, VGE = 0 V, Tj = 25 °C

-

IF = 400 A, VGE = 0 V, Tj = 125 °C

-

Reverse recovery time

trr

IF = 400 A, VR = -300 V, VGE = 0 V

diF/dt = -2000 A/µs, Tj = 125 °C

-

Reverse recovery charge

Qrr

IF = 400 A, VR = -300 V, VGE = 0 V

diF/dt = -2000 A/µs, Tj = 125 °C

-

V

1.9

2.4

1.7

-

ns

170

-

µC

15

-

Semiconductor Group

3

Apr-25-1997

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