BSM 400 GB 60 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
VGE(th)
V
VGE = VCE, IC = 9 mA
4.5
5.5
6.5
Collector-emitter saturation voltage
VCE(sat)
VGE = 15 V
IC = 400 A
Tj = 25 °C
-
2.1
2.55
Tj = 125 °C
-
2.2
2.65
Zero gate voltage collector current
ICES
mA
VCE = 600 V, VGE = 0 V, Tj = 25 °C
-
5
-
VCE = 600 V, VGE = 0 V, Tj = 125 °C
-
25
-
Gate-emitter leakage current
IGES
µA
VGE = 20 V, VCE = 0 V
-
-
1
AC Characteristics
Transconductance
gfs
S
VCE = 20 V, IC = 400 A
100
-
-
Input capacitance
Ciss
nF
VCE = 25 V, VGE = 0 V, f = 1 MHz
-
22
-
Output capacitance
Coss
VCE = 25 V, VGE = 0 V, f = 1 MHz
-
2.5
-
Reverse transfer capacitance
Crss
VCE = 25 V, VGE = 0 V, f = 1 MHz
-
1.5
-
Semiconductor Group
2
Apr-25-1997