BSM15GD60DN2 Ver la hoja de datos (PDF) - Infineon Technologies

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Fabricante

BSM15GD60DN2

IGBT Power Module

Infineon Technologies 

IGBT Power Module

BSM 15 GD 60 DN2

• Power module

• 3-phase full-bridge

• Including fast free-wheel diodes

• Package with insulated metal base plate

Type

BSM 15 GD 60 DN2

VCE IC

600V 15A

Package

ECONOPACK 1

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-gate voltage

RGE = 20 kΩ

Gate-emitter voltage

DC collector current

TC = 40 °C

Pulsed collector current, tp = 1 ms

TC = 40 °C

Power dissipation per IGBT

TC = 25 °C

Chip temperature

Storage temperature

Thermal resistance, chip case

Diode thermal resistance, chip case

Insulation test voltage, t = 1min.

Creepage distance

Clearance

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Symbol

VCE

VCGR

VGE

IC

ICpuls

Ptot

Tj

Tstg

RthJC

RthJCD

Vis

-

-

-

-

Ordering Code

C67076-A2510-A67

Values

Unit

600

V

600

± 20

A

15

30

W

50

+ 125

°C

-55 ... + 150

≤ 2.9

K/W

≤ 3.5

2500

Vac

12

mm

10

F

sec

40 / 125 / 56

Semiconductor Group

1

Jan-09-1997

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