BSM10GD60DN2 Ver la hoja de datos (PDF) - Infineon Technologies
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BSM10GD60DN2 Datasheet PDF : 9 Pages
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BSM 10 GD 60 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
td(on)
VCC = 300 V, VGE = 15 V, IC = 10 A
RGon = 100 Ω
-
40
Rise time
tr
VCC = 300 V, VGE = 15 V, IC = 10 A
RGon = 100 Ω
Turn-off delay time
td(off)
VCC = 300 V, VGE = -15 V, IC = 10 A
RGoff = 100 Ω
-
250
Fall time
tf
VCC = 300 V, VGE = -15 V, IC = 10 A
RGoff = 100 Ω
ns
80
nS
ns
370
nS
Free-Wheel Diode
Diode forward voltage
IF = 10 A, VGE = 0 V, Tj = 25 °C
IF = 10 A, VGE = 0 V, Tj = 125 °C
Reverse recovery time
IF = 10 A, VR = -300 V, VGE = 0 V
diF/dt = -100 A/µs, Tj = 125 °C
Reverse recovery charge
IF = 10 A, VR = -300 V, VGE = 0 V
diF/dt = -100 A/µs
Tj = 25 °C
Tj = 125 °C
VF
-
-
trr
-
Qrr
-
-
V
1.6
-
1.4
-
µs
0.1
-
µC
0.25 -
0.5
-
Semiconductor Group
3
Jan-09-1997
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