BSM10GD60DN2 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BSM10GD60DN2

IGBT Power Module

Infineon Technologies 

BSM 10 GD 60 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Gate threshold voltage

VGE = VCE, IC = 0.35 mA

Collector-emitter saturation voltage

VGE = 15 V, IC = 10 A, Tj = 25 °C

VGE = 15 V, IC = 10 A, Tj = 125 °C

Zero gate voltage collector current

VCE = 600 V, VGE = 0 V, Tj = 25 °C

Gate-emitter leakage current

VGE = 25 V, VCE = 0 V

VGE(th)

4.5

5.5

VCE(sat)

-

2.1

-

2.2

ICES

-

-

IGES

-

-

V

6.5

2.7

2.8

mA

1

nA

100

AC Characteristics

Transconductance

gfs

S

VCE = 20 V, IC = 10 A

3

-

-

Input capacitance

Ciss

pF

VCE = 25 V, VGE = 0 V, f = 1 MHz

-

570

-

Output capacitance

Coss

VCE = 25 V, VGE = 0 V, f = 1 MHz

-

80

-

Reverse transfer capacitance

Crss

VCE = 25 V, VGE = 0 V, f = 1 MHz

-

50

-

Semiconductor Group

2

Jan-09-1997

Share Link: