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PS11016 Datasheet PDF : 6 Pages
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MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS11016
FLAT-BASE TYPE
INSULATED TYPE
TOTAL SYSTEM
Symbol
Item
Condition
Ratings
Unit
Tj
Junction temperature
(Note 2)
–20 ~ +125
°C
Tstg
Storage temperature
—
–40 ~ +125
°C
TC
Module case operating temperature
(Fig. 3)
–20 ~ +100
°C
Viso
Isolation voltage
60 Hz sinusoidal AC applied between all terminals and
the base plate for 1 minute.
2500
Vrms
Mounting torque
Mounting screw: M3.5
0.78 ~ 1.27
N·m
Note 2) The item defines the maximum junction temperature for the power elements (IGBT/Diode) of the ASIPM to ensure safe operation. How-
ever, these power elements can endure instantaneous junction temperature as high as 150°C instantaneously . To make use of this ad-
ditional temperature allowance, a detailed study of the exact application conditions is required and, accordingly, necessary information
is requested to be provided before use.
CASE TEMPERATURE MEASUREMENT POINT (3mm from the base surface)
TC
(Fig. 3)
THERMAL RESISTANCE
Symbol
Item
Rth(j-c)Q
Rth(j-c)F
Rth(j-c)Q
Rth(j-c)F
Rth(c-f)
Junction to case Thermal
Resistance
Contact Thermal Resistance
Condition
Inverter IGBT (1/6)
Inverter FWDi (1/6)
Brake IGBT
Brake FWDi
Case to fin, thermal grease applied
Ratings
Min.
Typ.
Max. Unit
—
—
2.3 °C/W
—
—
2.4 °C/W
—
—
2.9 °C/W
—
—
4.5 °C/W
—
—
0.040 °C/W
ELECTRICAL CHARACTERISTICS (Tj = 25°C, VDH = 15V, VDB = 15V unless otherwise noted)
Symbol
Item
Condition
VCE(sat)
VEC
VCE(sat)Br
VFBr
ton
tc(on)
toff
tc(off)
trr
Collector-emitter saturation voltage
FWDi forward voltage
Brake IGBT
Collector-emitter saturation voltage
Brake diode forward voltage
Switching times
FWD reverse recovery time
Short circuit endurance
(Output, Arm, and Load,
Short Circuit Modes)
VDH = VDB = 15V, Input = ON, Tj = 25°C, Ic = 30A
Tj = 25°C, Ic = –30A, Input = OFF
VDH = 15V, Input = ON, Tj = 25°C, Ic = 15A
Tj = 25°C, IF = 15A, Input = OFF
1/2 Bridge inductive, Input = ON
VCC = 300V, Ic = 30A, Tj = 125°C
VDH = 15V, VDB = 15V
Note : ton, toff include delay time of the internal control
circuit
VCC ≤ 400V, Input = ON (one-shot)
Tj = 125°C start
13.5V ≤ VDH = VDB ≤ 16.5V
Ratings
Min.
Typ.
Max. Unit
—
—
2.9
V
—
—
2.9
V
—
—
3.5
V
—
—
2.9
V
0.35
0.7
1.8
µs
—
0.35
0.9
µs
—
1.3
2.0
µs
—
0.5
1.0
µs
—
0.15
—
µs
• No destruction
• FO output by protection operation
Switching SOA
VCC ≤ 400V, Tj ≤ 125°C,
Ic < IOL(CL) operation level, Input = ON,
13.5V ≤ VDH = VDB ≤ 16.5V
• No destruction
• No protecting operation
• No FO output
IDH
Vth(on)
Vth(off)
Ri
Circuit current
Input on threshold voltage
Input off threshold voltage
Input pull-up resister
VDH = 15V, VCIN = 5V
Integrated between input terminal-VDH
—
—
150 mA
0.8
1.4
2.0
V
2.5
3.0
4.0
V
—
150
—
kΩ
Jan. 2000
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