MLX90254 Ver la hoja de datos (PDF) - Melexis Microelectronic Systems

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MLX90254

Differential Dynamic Hall Effect Sensor

Melexis Microelectronic Systems  

MLX90254

Differential Dynamic Hall Effect Sensor

3. Glossary of Terms

1 mT = 10 Gauss: Flux density units.

Pre-induction: the pre-induction is the magnetic field induced by the back bias magnet.

Operating point: the value of the differential flux density when the transistor output turns ON.

Release point: the value of the differential flux density when the transistor output turns OFF

Margin: the flux density of the magnetic field has to be higher or lower than the margin value to enable the

next toggling of the output.

4. Absolute Maximum Ratings

Supply Voltage, VDD

Reverse Voltage Protection

Output Current, IOUT

Output Short-Circuit Current

Output Voltage

Operating Temperature Range, TA

Storage Temperature Range, TS

Maximum Junction Temperature

Magnetic Flux Density

24 V

-0.3 V

25 mA

150 mA

24 V

-40 °C to 150°C

-55 °C to 165°C

175 °C

Infinite

Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability.

3901090254

Rev. 006

Page 4 of 10

Datasheet

Feb/12

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