M65609E(2007) Ver la hoja de datos (PDF) - Atmel Corporation

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M65609E
(Rev.:2007)

Rad Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM

Atmel Corporation 

Features

• Operating Voltage: 3.3V

• Access Time: 40 ns

• Very Low Power Consumption

– Active: 160 mW (Max)

– Standby: 70 µW (Typ)

• Wide Temperature Range: -55°C to +125°C

• MFP 32 leads 400 Mils Width Package

• TTL Compatible Inputs and Outputs

• Asynchronous

• Designed on 0.35µm Process

• No Single Event Latch-up below a LET threshold of 80 MeV/mg/cm2

• Tested up to a Total Dose of 200 Krad (Si) according to MIL STD 883 Method 1019

• Quality grades: QML Q or V with SMD 5962-02501

Description

The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits.

Utilizing an array of six transistors (6T) memory cells, the M65609E combines an

extremely low standby supply current with a fast access time at 40 ns. The high stabil-

ity of the 6T cell provides excellent protection against soft errors due to noise.

The M65609E is processed according to the methods of the latest revision of the MIL

PRF 38535 and ESCC 9000.

It is produced on the same process as the MH1RT sea of gates series.

Rad Hard

128K x 8

3.3-volt

Very Low Power

CMOS SRAM

M65609E

Rev. 4158I–AERO–07/07

1

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