MJL21194 Ver la hoja de datos (PDF) - ON Semiconductor

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MJL21194

16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS

ON Semiconductor 

MJL21193, MJL21194

3.0

2.5 TJ = 25°C

IC/IB = 10

2.0

1.5

PNP MJL21193

TYPICAL CHARACTERISTICS

1.4

1.2 TJ = 25°C

IC/IB = 10

1.0

0.8

0.6

NPN MJL21194

VBE(sat)

1.0

VBE(sat)

0.5

VCE(sat)

0

0.1

1.0

10

100

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Typical Saturation Voltages

0.4

0.2

VCE(sat)

0

0.1

1.0

10

100

IC, COLLECTOR CURRENT (AMPS)

Figure 10. Typical Saturation Voltages

10

TJ = 25°C

PNP MJL21193

1.0

VCE = 20 V (SOLID)

VCE = 5 V (DASHED)

10

TJ = 25°C

NPN MJL21194

VCE = 20 V (SOLID)

1.0

VCE = 5 V (DASHED)

0.1

0.1

1.0

10

100

IC, COLLECTOR CURRENT (AMPS)

Figure 11. Typical Base−Emitter Voltage

0.1

0.1

1.0

10

100

IC, COLLECTOR CURRENT (AMPS)

Figure 12. Typical Base−Emitter Voltage

100

There are two limitations on the power handling ability of

1 SEC

10

a transistor; average junction temperature and secondary

breakdown. Safe operating area curves indicate IC − VCE lim-

its of the transistor that must be observed for reliable opera-

tion; i.e., the transistor must not be subjected to greater dis-

sipation than the curves indicate.

1.0

The data of Figure 13 is based on TJ(pk) = 150°C; TC is vari-

able depending on conditions. At high case temperatures,

thermal limitations will reduce the power than can be handled

to values less than the limitations imposed by second break-

0.1

1.0

10

down.

100

1000

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 13. Active Region Safe Operating Area

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