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MJH16006 Ver la hoja de datos (PDF) - ON Semiconductor

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MJH16006 Datasheet PDF : 12 Pages
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ON Semiconductort
NPN Silicon Power Transistor
1 kV SWITCHMODEt Series
These transistors are designed for high–voltage, high–speed, power
switching in inductive circuits where fall time is critical. They are
particularly suited for line–operated SWITCHMODE applications.
Typical Applications:
Switching Regulators
Inverters
Solenoids
Relay Drivers
Motor Controls
Deflection Circuits
Features:
Collector–Emitter Voltage — VCEV = 1000 Vdc
Fast Turn–Off Times
80 ns Inductive Fall Time — 100_C (Typ)
120 ns Inductive Crossover Time — 100_C (Typ)
800 ns Inductive Storage Time — 100_C (Typ)
100_C Performance Specified for:
Reverse–Biased SOA with Inductive Load
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
Extended FBSOA Rating Using Ultra–fast Rectifiers
Extremely High RBSOA Capability
MJH16006A
POWER TRANSISTORS
8 AMPERES
500 VOLTS
150 WATTS
CASE 340D–02
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
April, 2001 – Rev. 6
Publication Order Number:
MJH16006A/D

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