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MJF15030 Datasheet PDF : 6 Pages
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MJF15030 (NPN),
MJF15031 (PNP)
Complementary Power
Transistors
For Isolated Package Applications
Designed for general−purpose amplifier and switching applications,
where the mounting surface of the device is required to be electrically
isolated from the heatsink or chassis.
Features
• Electrically Similar to the Popular MJE15030 and MJE15031
• 150 VCEO(sus)
• 8 A Rated Collector Current
• No Isolating Washers Required
• Reduced System Cost
• High Current Gain−Bandwidth Product −
fT = 30 MHz (Min) @ IC
= 500 mAdc
• UL Recognized, File #E69369, to 3500 VRMS Isolation
• Pb−Free Packages are Available*
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ RMS Isolation Voltage (Note 1)
(t = 0.3 sec, R.H. ≤ 30%, TA = 25_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Per Figure 11
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current − Continuous
− Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation (Note 2) @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TA = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction−to−Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction−to−Case (Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Lead Temperature for Soldering Purposes
Symbol
VCEO
VCB
VEB
VISOL
IC
IB
PD
PD
TJ, Tstg
Symbol
RqJA
RqJC
TL
Value
150
150
5
4500
Unit
Vdc
Vdc
Vdc
VRMS
8
Adc
16
2
Adc
36
0.016
W
W/_C
2.0
0.016
W
W/_C
–65 to +150 _C
Max
Unit
62.5
_C/W
3.5
_C/W
260
_C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Proper strike and creepage distance must be provided.
2. Measurement made with thermocouple contacting the bottom insulated
surface (in a location beneath the die), the devices mounted on a heatsink with
thermal grease and a mounting torque of ≥ 6 in. lbs.
http://onsemi.com
COMPLEMENTARY SILICON
POWER TRANSISTORS
8 AMPERES
150 VOLTS, 36 WATTS
MARKING
DIAGRAM
1
2
3
TO−220 FULLPACK
CASE 221D
STYLE 2
MJF1503xG
AYWW
MJF1503x = Specific Device Code
x = 0 or 1
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MJF15030 TO−220 FULLPACK 50 Units/Rail
MJF15030G TO−220 FULLPACK 50 Units/Rail
(Pb−Free)
MJF15031 TO−220 FULLPACK 50 Units/Rail
MJF15031G TO−220 FULLPACK 50 Units/Rail
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
1
July, 2008 − Rev. 6
Publication Order Number:
MJF15030/D
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