1N5391S Ver la hoja de datos (PDF) - LiteOn Technology

Número de pieza

componentes Descripción

Fabricante

1N5391S

PLASTIC SILICON RECTIFIERS

LiteOn Technology 

LITE-ON

SEMICONDUCTOR

PLASTIC SILICON RECTIFIERS

FEATURES

Low cost

Diffused junction

Low forward voltage drop

Low reverse leakage current

High current capability

The plastic material carries UL recognition 94V-0

MECHANICAL DATA

Case : JEDEC DO-41 molded plastic

Polarity : Color band denotes cathode

Weight : 0.012 ounces, 0.34 grams

Mounting position : Any

1N5391S thru 1N5399S

REVERSE VOLTAGE - 50 to 1000 Volts

FORWARD CURRENT - 1.5 Amperes

DO-41

A

B

A

C

D

DO-41

Dim.

Min.

Max.

A

25.4

-

B

4.10

5.20

C

0.71

0.86

D

2.00

2.70

All Dimensions in millimeter

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

CHARACTERISTICS

1N 1N 1N 1N 1N 1N 1N 1N

SYMBOL 5391S 5392S 5393S 5394S 5395S 5396S 5397S 5398S

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

VRRM 50 100 200 300 400 500 600 800

VRMS 35 70 140 210 280 350 420 560

VDC

50 100 200 300 400 500 600 800

Maximum Average Forward Rectified Current

.375",(9.5mm) Lead Lengths

@TL=70 C I(AV)

1.5

1N

5399S

1000

700

1000

UNIT

V

V

V

A

Peak Forward Surge Current

8.3ms single half sine-wave

IFSM

50

A

super imposed on rated load (JEDEC Method)

Maximum forward Voltage at 1.5A DC

VF

Maximum DC Reverse Current

at Rated DC Blocking Voltage

@TJ=25 C

@TJ=100 C

IR

Typical Junction

Capacitance (Note 1)

CJ

1.1

V

5

50

uA

20

pF

Typical Thermal Resistance (Note 2)

R0JL

Operating Temperature Range

TJ

Storage Temperature Range

TSTG

NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2.Thermal Resistance Junction to Lead.

26

-55 to +125

-55 to +150

C/W

C

C

REV. 3, Oct-2010, KDAC02

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