MJF47G(2012) Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza

componentes Descripción

Fabricante

MJF47G
(Rev.:2012)

High Voltage Power Transistor

ON Semiconductor 

1

0.5

0.2

0.1

0.05

0.02

0.01

0.02

MJF47G

5

tr

TJ = 25°C

VCC = 200 V

2

IC/IB = 5

1

td

0.5

0.2

0.1

0.05

0.1

0.2

0.5

1

IC, COLLECTOR CURRENT (AMPS)

0.05

2

0.02

Figure 3. Turn−On Time

TJ = 25°C

ts

VCC = 200 V

IC/IB = 5

tf

0.05 0.1

0.2

0.5

1

2

IC, COLLECTOR CURRENT (AMPS)

Figure 4. Turn−Off Time

TURN-ON PULSE

APPROX

VCC

+11 V

RC

Vin 0

VEB(off)

APPROX

+11 V

Vin

t1

t3

Vin

51

RB

Cjd << Ceb

t1 ≤ 7 ns

- 4 V

100 < t2 < 500 ms

t3 < 15 ns

t2

TURN-OFF PULSE

DUTY CYCLE ≈ 2%

APPROX - 9 V

RB and RC VARIED TO OBTAIN

DESIRED CURRENT LEVELS.

SCOPE

Figure 5. Switching Time Equivalent Circuit

1

0.5

0.3

0.2

0.1

SINGLE PULSE

0.05

RqJC(t) = r(t) RqJC

RqJC = 4.4°C/W MAX

0.03

TJ(pk) - TC = P(pk) RqJC(t)

0.02

0.01

0.1 0.2 0.3 0.5

1

23 5

10

20 30 50 100 200 300 500 1K 2K 3K 5K 10 K

t, TIME (msec)

Figure 6. Thermal Response

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3

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