MJF122(2008) Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza

componentes Descripción

Fabricante

MJF122
(Rev.:2008)

Complementary Power Darlingtons

ON Semiconductor 

TA TC

4 80

MJF122, MJF127

3 60

TC

2 40

1 20

TA

0

0 20 40 60 80 100 120 140 160

T, TEMPERATURE (°C)

Figure 3. Maximum Power Derating

1

0.5

0.3

0.2

0.1

0.05

0.03

0.02

0.01

0.1

0.2 0.3 0.5

SINGLE PULSE

RqJC(t) = r(t) RqJC

TJ(pk) - TC = P(pk) RqJC(t)

1

2 3 5 10 20 30 50 100 200 300 500 1K 2K 3K 5K 10K

t, TIME (ms)

Figure 4. Thermal Response

10

5

3 TJ = 150°C

2

1

100 ms

1 ms

d­

5 ms

c

0.5

CURRENT LIMIT

SECONDARY BREAKDOWN

0.3

LIMIT

0.2

THERMAL LIMIT @

TC = 25°C (SINGLE PULSE)

0.1

1

23 5

10

20 30 50

100

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. Maximum Forward Bias

Safe Operating Area

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Secondary breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

< 150_C. TJ(pk) may be calculated from the data in Figure 4.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by secondary breakdown.

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3

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