MJD32CT4-A(2007) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

MJD32CT4-A
(Rev.:2007)

Low voltage PNP power transistor

STMicroelectronics 

MJD32CT4-A

2

Electrical characteristics

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Table 2. Electrical characteristics

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

ICES

Collector cut-off current

(VBE = 0)

ICEO

Collector cut-off current

(IB = 0)

IEBO

Emitter cut-off current

(IC = 0)

VCEO(sus) (1)

Collector-emitter

sustaining voltage

(IB = 0)

VCE(sat) (1) Collector-emitter

saturation voltage

VCE =-100V

VCB =-60V

VEB =-5V

IC =-30mA

IC =-3A _

-100

IB =-375mA

-20 µA

-50 µA

-0.1 mA

V

-1.2 V

VBE(on) (1) Base-emitter on voltage IC =-3A _ VCE=-4V

hFE

DC current gain

IC =-1A _ _ VCE =-4V

25

IC = -3A

VCE =-4V

10

-1.8 V

50

Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5%

2.1

Electrical characteristic (curves)

Figure 1. Safe operating area

Figure 2. Derating curve

3/9

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