IXGH28N60B Ver la hoja de datos (PDF) - IXYS CORPORATION

Número de pieza

componentes Descripción

Fabricante

IXGH28N60B

Low VCE(sat)IGBT

IXYS CORPORATION 

Fig. 13. Dependence of Sw itching

Tim e on Tem perature

500

td(off)

450

tfi - - - - - -

RG = 10Ω

400

VGE = 15V

VCE = 480V

IC = 56A

350

300

IC = 14A

250

IC = 28A

200

IC = 56A

150

25 35 45 55 65 75 85 95 105 115 125

TJ - Degrees Centigrade

10000

1000

Fig. 15. Capacitance

f = 1 MHz

Cies

IXGH 28N60B

IXGT 28N60B

Fig. 14. Gate Charge

15

VCE = 300V

IC = 28A

12

IG= 10mA

9

6

3

0

0

10

20

30

40

50

60

70

Q G - nanoCoulombs

Coes

100

10

0

1

Cres

5 10 15 20 25 30 35 40

VC E - Volts

Fig. 16. Maxim um Transient Therm al Resistance

0.5

0.1

1

© 2003 IXYS All rights reserved

10

100

Pulse Width - milliseconds

1000

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