IXGH28N60B Ver la hoja de datos (PDF) - IXYS CORPORATION

Número de pieza

componentes Descripción

Fabricante

IXGH28N60B

Low VCE(sat)IGBT

IXYS CORPORATION 

IXGH 28N60B

IXGT 28N60B

Fig. 7. Transconductance

35

30 TJ = -40ºC

25ºC

25

125ºC

20

10.0

9.0

8.0

7.0

6.0

Fig. 8. Dependence of Eoff on RG

TJ = 125ºC

VGE = 15V

VCE = 480V

IC = 56A

15

10

5

0

0 10 20 30 40 50 60 70 80 90

I C - Amperes

5.0

4.0

IC = 28A

3.0

2.0

IC = 14A

1.0

10

30

50

70

90 110 130 150

R G - Ohms

Fig. 9. Dependence of Eoff on IC

8.0

RG = 10Ω

7.0

RG = 82Ω - - - -

VGE = 15V

6.0

VCE = 480V

TJ = 125ºC

5.0

4.0

TJ = 125ºC

3.0

2.0

TJ = 25ºC

1.0

0.0

10

20

30

40

50

60

I C - Amperes

Fig. 10. Dependence of Eoff on

Tem perature

8.0

RG = 10Ω

7.0

RG = 82Ω - - - -

6.0

VGE = 15V

VCE = 480V

IC = 56A

5.0

4.0

3.0

IC = 28A

2.0

1.0

0.0

IC = 14A

25 35 45 55 65 75 85 95 105 115 125

TJ - Degrees Centigrade

1200

1100

1000

900

800

Fig. 11. Dependence of Sw itching

Tim e on RG

td(off)

tfi - - - - - -

TJ = 125ºC

VGE = 15V

VCE = 480V

700

600 IC = 14A

500

IC = 56A

400

300

IC = 28A

200

10

30

50 R G70- Ohm9s0

110 130 150

IXYS reserves the right to change limits, test conditions, and dimensions.

Fig. 12. Dependence of Sw itching

Tim e on IC

600

550

td(off)

tfi - - - - - -

500

RG = 10Ω

VGE = 15V

450

VCE = 480V

400

350

TJ = 125ºC

300

250

200

TJ = 25ºC

150

10

20

30

40

50

60

I C - Amperes

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

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