IXGH28N60B Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGH28N60B Datasheet PDF : 5 Pages
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Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IPCulse= tIeCs90t;,
Vt C≤E
= 10 V,
300 µs,
duty
cycle
≤
2
%
15 25
S
VCE = 25 V, VGE = 0 V, f = 1 MHz
1500
pF
130
pF
42
pF
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
68 100 nC
15 30 nC
20 40 nC
Inductive load, TJ = 25°C
VICCE
=
=
I0C.980, VVCGEES,=R1G5=VRoff
=
10
Ω
15
ns
25
ns
175 400 ns
260 400 ns
2
4 mJ
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 10 Ω
15
ns
25
ns
0.2
mJ
400
ns
400
ns
3
mJ
TO-247
0.83 K/W
0.25
K/W
IXGH 28N60B
IXGT 28N60B
TO-247 AD Outline
123
Terminals:
1 - Gate
2 - Collector
3 - Emitter
Tab-Collector
Dim. Millimeter
Min. Max.
A
4.7 5.3
AA12
2.2 2.54
2.2 2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Terminals: 1 - Gate
2 - Collector
3 - Emitter Tab - Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
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