HGTG20N60B3.. Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
HGTG20N60B3.. Datasheet PDF : 6 Pages
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HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3
Typical Performance Curves (Continued)
500
TJ = 150oC, TC = 75oC, VGE = 15V
RG = 10Ω, L = 100µH
VCE = 480V
100
fMAX1 = 0.05/(td(OFF)I + td(ON)I)
fMAX2 = (PD - PC)/(EON + EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 0.76oC/W
10
5
10
20
30
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
120
TC = 150oC, VGE = 15V, RG = 10Ω
100
80
60
40
20
0
0
100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 14. SWITCHING SAFE OPERATING AREA
100
0.5
0.2
10-1 0.1
0.05
0.02
10-2 0.01
SINGLE PULSE
10-3
10-5
10-4
DUTY FACTOR, D = t1 / t2
PD
PEAK TJ = (PD X ZθJC X RθJC) + TC
t1
t2
10-3
10-2
10-1
100
101
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveform
RG = 10Ω
L = 100µH
RHRP3060
+
VDD = 480V
-
FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT
5
90%
VGE
VCE
ICE
10%
EOFF EON
90%
10%
td(OFF)I tfI
trI
td(ON)I
FIGURE 17. SWITCHING TEST WAVEFORMS
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