IXGJ50N60B Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGJ50N60B Datasheet PDF : 4 Pages
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Figure 7. Dependence of EON and EOFF on IC
6
TJ = 125°C
5
4
3
RG = 4.7Ω
12
E(ON)
10
8
E(OFF)
6
2
4
1
2
0
0
0
20
40
60
80
100
IC - Amperes
Figure 9. Gate Charge
16
IC = 25A
VCE = 250V
12
8
4
IXGH 50N60B IXGK 50N60B
IXGJ 50N60B IXGT 50N60B
Figure 8. Dependence of EON and EOFF on RG
6
TJ = 125°C
5
E(ON)
4
3
E(ON)
IC = 100A
2
IC = 50A
1
E(ON)
0
0 10
IC =25A
20 30 40
RG - Ohms
12
10
E(OFF)
8
6
E(OFF)
4
E(OFF)
2
0
50 60
Figure 10. Turn-off Safe Operating Area
600
100
10
TJ = 125°C
RG = 6.2 Ω
dV/dt < 5V/ns
1
0
0
40
80
120 160 200
Qg - nanocoulombs
0.1
0
100 200 300 400 500 600
VCE - Volts
Figure 11. IGBT Transient Thermal Resistance
1
0.1
0.01
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
Single pulse
D = Duty Cycle
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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